Definition:
TFT devices on the basis of inorganic materials, involving： amorphous silicon (a-Si),  low temperature poly-crystalline silicon (LTPS), and metal oxide semiconductors. Particularly, metal oxide semiconductors are considered the most prominent candidate for next-generation flexible high-resolution active matrix organic light emitting diode (AMOLED) display backplanes, as well as the most suitable technology to fuel the realization of tomorrow’s ubiquitous electronics.
Advantages: 
high carrier mobility, good stability, excellent mechanical properties
Issues and challenges:
1. solution-processing techniques
2. development of p-type semiconductor